Reverse bias electroluminescence in Er‐doped β‐Ga 2 O 3 Schottky barrier diodes manufactured by pulsed laser deposition

Strong electroluminescence (EL) of reverse-biased Er-doped β-Ga2O3 Schottky barrier diodes is demonstrated. The devices are prepared by pulsed laser deposition featuring co-doping n-type dopant Si and isovalent Er, while contacts formed Pt-sputtering. display a rectification ratio more than nine orders magnitude at ±3 V in the virgin state, but under reverse bias that yields leakage current density 0.2–0.4 A cm−2, clearly visible multiband EL emerges. homogeneously distributed across diode area, peak wavelengths compare well with reported transition for Er3+.